New Step by Step Map For BaGa4Se7 Crystal
New Step by Step Map For BaGa4Se7 Crystal
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High efficiency and high peak power picosecond mid-infrared optical parametric amplifier depending on BaGa4Se7 crystal.
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The deforming vibrations of Ga–O–Ga bonds in the defect crystal deliver two IR absorption bands Found all over 665 cm−1, akin to the crystal residual absorption. The end result may help us to eradicate the residual absorption and improve the crystal quality.
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A constant-wave mid-infrared radiation from variation frequency generation by mixing a constant-wave Ti: sapphire laser as well as a continuous-wave YAG laser inside of a 15 mm very long BaGa4Se7 crystal is…
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β-BaGa4Se7: a promising IR nonlinear optical crystal designed by predictable structural rearrangement†
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The BaGa4Se7 (BGSe) crystal is a superb mid- and far-IR nonlinear optical crystal, but generally exhibits an unexpected residual absorption peak all around 15 μm which considerably deteriorates the crystal overall performance. The structural origin of residual absorption remains beneath discussion.
′�?, by using a frequency of 295 cm−1, is attributed to your stretching vibration of Ga–Se bonds. The two-phonon absorption in the 295 cm−1 phonon corresponds to your crystal IR absorption edge, as opposed to the residual absorption peak. Density functional principle computations show the residual absorption from the BGSe crystal originates with the OSe defect (Se is substituted by O).